IGBT transistors are silicon based power switches designed for high current and high voltage control in power electronics. Benefits - Efficient switching with low conduction losses in DC-AC and DC-DC topologies - Fast switching capability to support higher operating frequencies - Robust performance across a wide operating temperature range - Reliable in demanding industrial environments - Compatible with common gate drive signals and standard control schemes - Available in multiple package options to fit board or module assemblies Function and features - Acts as a high side or low side switch in inverter stages and motor drives - Provides controlled turn on and turn off for high power loads - Silicon based IGBT die encapsulated for protection and durability - Designed for repeatable switching with stable electrical characteristics Materials and size - Silicon based die inside protective packaging - Multiple package sizes offered to fit different space and mounting requirements Performance attributes - High current rating and voltage rating within standard IGBT families - Optimized for reliable switching with predictable performance over time Use scenarios - Industrial motor drives and variable frequency drives for conveyors and pumps - Solar and wind energy inverters and backup UPS power stages - Power supplies and welding equipment requiring efficient high power switching